Improved photoluminescence and sensing stability of porous silicon nanowires by surface passivation.
نویسندگان
چکیده
Core-shell structured silicon nanowires (Si NWs) were obtained by coating Si NWs with an HfO2 layer. Enhanced photoluminescence (PL) and a slightly decreased PL lifetime are achieved by HfO2 coating. Furthermore, the sensing stability is strongly improved. The improvement of PL properties is interpreted in terms of surface passivation and the Purcell effect.
منابع مشابه
Structure, morphology, and photoluminescence of porous Si nanowires: effect of different chemical treatments
The structure and light-emitting properties of Si nanowires (SiNWs) fabricated by a single-step metal-assisted chemical etching (MACE) process on highly boron-doped Si were investigated after different chemical treatments. The Si nanowires that result from the etching of a highly doped p-type Si wafer by MACE are fully porous, and as a result, they show intense photoluminescence (PL) at room te...
متن کاملControl capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers
Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...
متن کاملControl capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers
Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...
متن کاملSynthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays
Herein, we prepare vertical and single crystalline porous silicon nanowires (SiNWs) via a two-step metal-assisted electroless etching method. The porosity of the nanowires is restricted by etchant concentration, etching time and doping lever of the silicon wafer. The diffusion of silver ions could lead to the nucleation of silver nanoparticles on the nanowires and open new etching ways. Like po...
متن کاملThermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells.
Epitaxial growth of a highly strained, coherent SiGe alloy shell around a Ge nanowire core is investigated as a method to achieve surface passivation and carrier confinement, important in realizing nanowire devices. The high photoluminescence intensity observed from the core-shell nanowires with spectral features similar to that of bulk Ge indicates effective surface passivation. Thermal stabil...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical chemistry chemical physics : PCCP
دوره 16 3 شماره
صفحات -
تاریخ انتشار 2014